Electric Double Layer Transistors Based on 2-D Electron Gases Operated at a Low Voltage for Synaptic Devices-Reference-Cited by-同舟云学术

Electric Double Layer Transistors Based on 2-D Electron Gases Operated at a Low Voltage for Synaptic Devices

Published:2024-09 Issue:9 Volume:71 Page:5771-5774
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Chong¹^ORCID,Zhu Yixin¹^ORCID,Chen Zhongqiang¹,Zhu Li²,Liu Long³^ORCID,Zhang Xu¹,Xu Ruijie¹^ORCID,Xing Guozhong³^ORCID,Wan Qing⁴,Zhang Rong¹^ORCID,Wang Xuefeng¹^ORCID

Affiliation:

1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China

2. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China

3. State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

4. Yongjiang Laboratory, Ningbo, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10623616.pdf?arnumber=10623616

Reference28 articles.

1. Low-power linear computation using nonlinear ferroelectric tunnel junction memristors

2. Artificial synapse network on inorganic proton conductor for neuromorphic systems

3. Artificial Synapses Emulated by an Electrolyte-Gated Tungsten-Oxide Transistor

4. Synergy of Spin‐Orbit Torque and Built‐In Field in Magnetic Tunnel Junctions with Tilted Magnetic Anisotropy: Toward Tunable and Reliable Spintronic Neurons

5. Memristor Based on TiO x /Al2O3 Bilayer as Flexible Artificial Synapse for Neuromorphic Electronics