Synergy of Spin‐Orbit Torque and Built‐In Field in Magnetic Tunnel Junctions with Tilted Magnetic Anisotropy: Toward Tunable and Reliable Spintronic Neurons-Reference-Cited by-同舟云学术

Synergy of Spin‐Orbit Torque and Built‐In Field in Magnetic Tunnel Junctions with Tilted Magnetic Anisotropy: Toward Tunable and Reliable Spintronic Neurons

Published:2022-08-04 Issue:30 Volume:9 Page:2203006
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Wang Di¹²,Wang Ziwei¹²,Xu Nuo³,Liu Long¹²,Lin Huai¹²,Zhao Xuefeng¹⁴,Jiang Sheng⁵,Lin Weinan⁶,Gao Nan⁴,Liu Ming²,Xing Guozhong¹²^ORCID

Affiliation:

1. Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

2. School of Integrated Circuits University of Chinese Academy of Sciences Beijing 100049 China

3. Department of Electrical Engineering and Computer Sciences University of California Berkeley CA 94720 USA

4. School of Microelectronics University of Science and Technology of China Hefei 230026 China

5. School of Microelectronics Northwestern Polytechnical University Xi'an 710072 China

6. Department of Physics Xiamen University Xiamen 361005 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202203006

Reference48 articles.

1. Memory devices and applications for in-memory computing

2. Prospect of Spin-Orbitronic Devices and Their Applications

3. Spintronics based random access memory: a review

4. A crossbar array of magnetoresistive memory devices for in-memory computing

5. Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing using Multistate Domain Wall Spin–Orbit Torque Device

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