Structural-relaxation-driven electron doping of amorphous oxide semiconductors by increasing the concentration of oxygen vacancies in shallow-donor states-Reference-Cited by-同舟云学术

Structural-relaxation-driven electron doping of amorphous oxide semiconductors by increasing the concentration of oxygen vacancies in shallow-donor states

Published:2016-03 Issue:3 Volume:8 Page:e250-e250
ISSN:1884-4049
Container-title:NPG Asia Materials
language:en
Short-container-title:NPG Asia Mater

Author:

Yeon Han-Wool,Lim Seung-Min,Jung Jung-Kyu,Yoo Hyobin,Lee Young-Joo,Kang Ho-Young,Park Yong-Jin,Kim Miyoung,Joo Young-Chang

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science,Modelling and Simulation,Condensed Matter Physics,General Materials Science,Modelling and Simulation

Link

http://www.nature.com/articles/am201611.pdf

Reference43 articles.

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2. Cherenack, K. H., Münzenrieder, N. S. & Tröster, G. Impact of mechanical bending on ZnO and IGZO thin-film transistors. IEEE Electron Device Lett. 31, 1254 (2010).

3. Kamiya, T., Nomura, K. & Hosono, H. Present status of amorphous In-Ga-Zn-O thin-film transistors. Sci. Technol. Adv. Mater. 11, 044305 (2010).

4. Kamiya, T. & Hosono, H. Material characteristics and applications of transparent amorphous oxide semiconductors. NPG Asia Mater. 2, 15 (2010).

5. Zhou, N., Buchholz, D. B., Zhu, G., Yu, X., Lin, H., Facchetti, A., Marks, T.J. & Chang, R.P. Ultraflexible polymer solar cells using amorphous zinc-indium-tin oxide transparent electrodes. Adv. Mater. 19, 1098 (2014).

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