Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep21869.pdf
Reference19 articles.
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2. Fortunato, E. et al. High mobility indium free amorphous oxide thin film transistors. Applied Physics Letters. 92, 222103–222103 (2008).
3. Kuo, S.-Y. et al. Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films. Microelectronics Reliability. 50, 730–733 (2010).
4. Fuh, C.-S. et al. Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application. Electron Device Letters, IEEE. 34, 1157–1159 (2013).
5. Kim, M.-G. et al. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing. Nature materials. 10, 382–388 (2011).
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