Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep17314.pdf
Reference58 articles.
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3. Choi, K., Arita, M. & Arakawa, Y. Selective-area growth of thin GaN nanowires by MOCVD. J. Cryst. Growth 357, 58–61 (2012).
4. Hersee, S. D., Sun, X. & Wang, X. The controlled growth of GaN nanowires. Nano Lett. 6, 1808–11 (2006).
5. Hiramatsu, K. et al. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO). J. Cryst. Growth 221, 316–326 (2000).
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