Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep24404.pdf
Reference33 articles.
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3. Waltereit, P. et al. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature 406, 865–868 (2000).
4. Piprek, J. Efficiency droop in nitride-based light-emitting diodes. Phys. Status Solidi A 207, 2217–2225 (2010).
5. Iveland, J. et al. Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Phys. Rev. Lett. 110, 177406 (2013).
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