Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics-Reference-Cited by-同舟云学术

Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics

Published:2020-10-15 Issue:10 Volume:14 Page:13611-13618
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chaste Julien¹^ORCID,Hnid Imen¹^ORCID,Khalil Lama¹,Si Chen²^ORCID,Durnez Alan¹,Lafosse Xavier¹,Zhao Meng-Qiang³^ORCID,Johnson A. T. Charlie³^ORCID,Zhang Shengbai⁴,Bang Junhyeok⁵,Ouerghi Abdelkarim¹

Affiliation:

1. Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France

2. School of Materials Science and Engineering, Beihang University, Beijing 100191, China

3. Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States

4. Department of Physics, Applied Physics, & Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States

5. Department of Physics, Chungbuk National University, Cheongju 28644, Republic of Korea

Funder

National Research Council of Science and Technology

H2020 Future and Emerging Technologies

U.S. Department of Energy

National Natural Science Foundation of China

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c05721

Reference50 articles.

1. Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors

2. A subthermionic tunnel field-effect transistor with an atomically thin channel

3. Tightly bound trions in monolayer MoS2

4. Strong interlayer hybridization in the aligned SnS2/WSe2 hetero-bilayer structure

5. Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide

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