Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry,Multidisciplinary
Reference13 articles.
1. O’Brien, K. P. et al. Advancing 2D monolayer CMOS through contact, channel and interface engineering. In 2021 IEEE International Electron Devices Meeting (IEDM), 7.1.1–7.1.4 (IEEE, San Francisco, CA, USA, 2021).
2. Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021).
3. Chhowalla, M., Jena, D. & Zhang, H. Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 1, 16052 (2016).
4. Huang, X. et al. High drive and low leakage current MBCFET with channel thickness 1.2 nm/0.6 nm. In 2020 IEEE International Electron Devices Meeting (IEDM), 12.1.1–12.1.4 (IEEE, San Francisco, CA, USA, 2020).
5. Tsutsui, G., Saitoh, M., Saraya, T., Nagumo, T. & Hiramoto, T. Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm. In IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest, 729–732 (IEEE, Washington, DC, USA, 2005).
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