High Drive and Low Leakage Current MBC FET with Channel Thickness 1.2nm/0.6nm-Reference-Cited by-同舟云学术

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High Drive and Low Leakage Current MBC FET with Channel Thickness 1.2nm/0.6nm

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Huang Xiaohe,Liu Chunsen,Tang Zhaowu,Zeng Senfeng,Liu Liwei,Hou Xiang,Chen Huawei,Li Jiayi,Jiang Yu-Gang,Zhang David Wei,Zhou Peng

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Research and Development

Shanghai Municipal Education Commission

China Postdoctoral Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371941.pdf?arnumber=9371941

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