Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C-Reference-Cited by-同舟云学术

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Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

Published:2018-01-30 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Chanson R.,Zhang L.,Naumov S.,Mankelevich Yu. A.,Tillocher T.,Lefaucheux P.,Dussart R.,Gendt S. De,Marneffe J.-F. de

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-20099-5.pdf

Reference42 articles.

1. Maex, K. et al. Low dielectric constant materials for microelectronics. J. Appl. Phys. 93, 8793–8843 (2003).

2. Humbert, A. et al. Effect of plasma treatment on ulra low-k material properties. Microelectron. Eng. 82, 399–404 (2005).

3. Eon, D. et al. Etch mechanisms of hybrid low-k material (sioch with porogen) in fluorocarbon based plasma. J. Vac. Sci. Technol. B 25, 712–719 (2007).

4. Ren, H., Antonelli, G., Nishi, Y. & Shohet, J. L. Plasma damage effects on low-k porous organosilicate glass. J. Appl. Phys 108, 094110 (2010).

5. Kunnen, E. et al. Effect of energetic ions on plasma damage of porous sicoh low-k materials. J. Vac. Sci. Technol. B 28, 448–459 (2010).

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