Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-40095-7.pdf
Reference25 articles.
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3. Lian, J.-T. et al. Improved light extraction efficiency on GaN LEDs by an In2O3 nano-cone film. J. Mater. Chem. C 1, 6559–6564 (2013).
4. Zhou, S. et al. Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer. Applied Surface Science. 355, 1013–1019 (2015).
5. Lv, J., Zheng, C., Zhou, S., Fang, F. & Yuan, S. Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step-like ITO and wavy sidewalls. Phys. Status Solidi A 213, 1181–1186 (2016).
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