First-Principles Understanding on the Formation of Inversion Domain Boundaries of Wurtzite AlN, AlScN, and GaN-Reference-Cited by-同舟云学术

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First-Principles Understanding on the Formation of Inversion Domain Boundaries of Wurtzite AlN, AlScN, and GaN

Published:2024-04-15 Issue:5 Volume:6 Page:3257-3263
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Hwang Taesoon¹^ORCID,Aigner Willi²^ORCID,Metzger Thomas²,Kummel Andrew C.³^ORCID,Cho Kyeongjae¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080-3021, United States

2. Qualcomm Germany RFFE GmbH, Bavaria, Anzinger Straße 13, 81671 München, Germany

3. Department of Chemistry and Biochemistry, University of California San Diego, La Jolla, California 92093, United States

Funder

Qualcomm

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00097

Reference37 articles.

1. Temperature-dependent absorption measurements of excitons in GaN epilayers

2. Linear and nonlinear optical properties of group-III nitrides

3. Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range

4. Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure

5. Dielectric function of wurtzite GaN and AlN thin films

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1. Strain-induced bent domains in ferroelectric nitrides;Physical Review B;2024-08-05

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