Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step-like ITO and wavy sidewalls-Reference-Cited by-同舟云学术

Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step-like ITO and wavy sidewalls

Published:2015-11-30 Issue:5 Volume:213 Page:1181-1186
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lv Jiajiang¹²,Zheng Chenju¹,Zhou Shengjun¹³,Fang Fang⁴,Yuan Shu⁵

Affiliation:

1. School of Power and Mechanical Engineering; Wuhan University; Wuhan 430072 P.R. China

2. Jiujiang Vocational and Technical College; Jiujiang 332007 P.R. China

3. State Key Laboratory of Mechanical System and Vibration; School of Mechanical Engineering; Shanghai Jiao Tong University; Shanghai 200240 P.R. China

4. Gold Medal Analytical and Testing Group; Guangzhou 510000 P.R. China

5. Quantum Wafer, Inc.; Foshan 528251 P.R. China

Funder

National High-tech R&D Program of China

Project of the National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532763/fullpdf

Reference23 articles.

1. The efficiency challenge of nitride light-emitting diodes for lighting

2. Lighting the 21st century

3. Self-textured oxide structure for improved performance of 365 nm ultraviolet vertical-type light-emitting diodes

4. Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters

5. Enhanced luminous efficiency of phosphor-converted LEDs by using back reflector to increase reflectivity for yellow light

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