Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-22602-4.pdf
Reference26 articles.
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3. Hosono, H. Recent progress in transparent oxide semiconductors: Materials and device application. Thin Solid Films 515, 6000–6014 (2007).
4. Parthiban, S. & Kwon, J. Y. Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor. J. Mater. Res. 29, 1585–1596 (2014).
5. Aikawa, S., Nabatame, T. & Tsukagoshi, K. Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications. Appl. Phys. Lett. 103, 172105 (2013).
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