Author:
Choi Sungho,An Youngseo,Lee Changmin,Song Jeongkeun,Nguyen Manh-Cuong,Byun Young-Chul,Choi Rino,McIntyre Paul C.,Kim Hyoungsub
Publisher
Springer Science and Business Media LLC
Reference32 articles.
1. Oktyabrsky, S. & Ye, P. D. Fundamentals of III-V semiconductor MOSFETs. Springer New York. (173–181 (2010).
2. del Alamo, J. A. Nanometre-scale electronics with III-V compound semiconductors. Nature 479, 317–323 (2011).
3. Takagi, S. et al. III-V/Ge channel MOS device technologies in nano CMOS era. Jpn. J. Appl. Phys. 54, 06FA01 (2015).
4. Nicollian, E. H. & Brews, J. R. MOS (Metal Oxide Semiconductor) physics and technology. John Wiley & Sons, Inc. New York. 212–221, 782–785 (1982).
5. Himpsel, F. J. et al. Microscopic structure of the SiO2/Si interface. Phys. Rev. B 38, 6084–6096 (1988).
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献