III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures
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Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-06889-3.pdf
Reference65 articles.
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4. Arif, R. A., Ee, Y. K. & Tansu, N. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Appl. Phys. Lett. 91, 091110 (2007).
5. Ee, Y. K. et al. Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode. IEEE J. Sel. Top. Quantum Electron. 15, 1066–1072 (2009).
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