Intentional polarity conversion of AlN epitaxial layers by oxygen-Reference-Cited by-同舟云学术

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Intentional polarity conversion of AlN epitaxial layers by oxygen

Published:2018-09-20 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Stolyarchuk N.,Markurt T.,Courville A.,March K.,Zúñiga-Pérez J.,Vennéguès P.,Albrecht M.

Funder

Agence Nationale de la Recherche

EC | Seventh Framework Programme

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-32489-w.pdf

Reference36 articles.

1. Zywietz, T. K., Neugebauer, J. J. & Scheffler, M. The adsorption of oxygen at GaN surfaces. Appl. Phys. Lett. 74, 1695–1697 (1999).

2. Fichtenbaum, N. A., Mates, T. E., Keller, S., DenBaars, S. P. & Mishra, U. K. Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition. J. Cryst. Growth 310, 1124–1131 (2008).

3. Neugebauer, J. et al. Adatom Kinetics On and Below the Surface: The Existence of a New Diffusion Channel. Phys. Rev. Lett. 90, 56101 (2003).

4. Ambacher, O. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85, 3222 (1999).

5. Amano, H., Sawaki, N., Akasaki, I. & Toyoda, Y. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Appl. Phys. Lett. 48, 353 (1986).

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