Simultaneously realizing reversal of piezoelectric coefficient and enhancement of piezoresponse by chromium-doping in aluminum nitride films

Author:

Yuan Langru1ORCID,Yu Hongcai1ORCID,Xiong Yaonan2ORCID,Li Zhou2ORCID,Wang Tingjun3ORCID,Shan Dongliang4ORCID,Chen Shulin2ORCID,Hong Jiawang3ORCID,Liu Yunya4ORCID,Yang Bin1ORCID

Affiliation:

1. College of Materials Science and Engineering, Hunan University 1 , Changsha, Hunan 410082, China

2. College of Semiconductors (College of Integrated Circuits), Hunan University 2 , Changsha, Hunan 410082, China

3. School of Aerospace Engineering, Beijing Institute of Technology 3 , Beijing 100081, China

4. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University 4 , Xiangtan, Hunan 411105, China

Abstract

Polarity inversion is an interesting phenomenon in non-centrosymmetric wurtzite-structured aluminum nitride (AlN), which offers an important platform to establish acoustic devices with heteropolar junctions. However, previous studies showed that switching polarity generally resulted in only reversing the piezoelectric coefficient (d33) in AlN films. Here, we discovered that appropriate Cr-doping would not only allow to reverse d33 but also improve piezoelectric response in the c-axis oriented AlN films by co-sputtering dual targets of Cr and Al. Specifically, the d33 was reversed from +2.6 pC/N for the undoped AlN to −2.6 pC/N for the 6.2 at. % Cr-doped CrxAl(1−x)N films. As the Cr-doping ratio increased to 9.3 at. %, d33 was −7.0 pC/N, which was 1.7 times higher than that of the undoped AlN films. Independent PFM phase image measurement offered further evidence of the polarity inversion by comparing the undoped and 9.3 at. % Cr-doped CrxAl(1−x)N films. This work offers a simple doping strategy that allows for simultaneous reversal of piezoelectric coefficient and enhancement of piezoresponse. As a result, it establishes a promising foundation for the design and development of acoustic wave devices featuring heteropolar junctions.

Funder

National Key Research and Development Program of China

Fundamental Research Funds for Central Universities

Science and Technology Innovation Program of Hunan Province

National Natural Science Foundation of China

Publisher

AIP Publishing

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