Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide-Reference-Cited by-同舟云学术

Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide

Published:2022-12-08 Issue: Volume: Page:
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Tong Ling^ORCID,Wan Jing^ORCID,Xiao Kai,Liu Jian,Ma Jingyi,Guo Xiaojiao,Zhou Lihui,Chen Xinyu,Xia Yin,Dai Sheng^ORCID,Xu Zihan,Bao Wenzhong^ORCID,Zhou Peng^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.nature.com/articles/s41928-022-00881-0.pdf

Reference49 articles.

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3. Liao, F. et al. Bioinspired in-sensor visual adaptation for accurate perception. Nat. Electron. 5, 84–91 (2022).

4. Liu, C. et al. Small footprint transistor architecture for photoswitching logic and in situ memory. Nat. Nanotechnol. 14, 662–667 (2019).

5. Mennel, L. et al. Ultrafast machine vision with 2D material neural network image sensors. Nature 579, 62–66 (2020).

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