Spatial mapping of band bending in semiconductor devices using in situ quantum sensors-Reference-Cited by-同舟云学术

Spatial mapping of band bending in semiconductor devices using in situ quantum sensors

Published:2018-09 Issue:9 Volume:1 Page:502-507
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Broadway D. A.^ORCID,Dontschuk N.,Tsai A.,Lillie S. E.^ORCID,Lew C. T.-K.,McCallum J. C.,Johnson B. C.,Doherty M. W.,Stacey A.^ORCID,Hollenberg L. C. L.,Tetienne J.-P.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/s41928-018-0130-0.pdf

Reference55 articles.

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3. Simon, J., Protasenko, V., Lian, C., Xing, H. & Jena, D. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science 327, 60–64 (2010).

4. Stathis, J. & Zafar, S. The negative bias temperature instability in MOS devices: a review. Microelectron. Reliab. 46, 270–286 (2006).

5. Zhang, P. et al. Electronic transport in nanometre-scale silicon-on-insulator membranes. Nature 439, 703–706 (2006).

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