Electronic transport in nanometre-scale silicon-on-insulator membranes-Reference-Cited by-同舟云学术

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Electronic transport in nanometre-scale silicon-on-insulator membranes

Published:2006-02 Issue:7077 Volume:439 Page:703-706
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Zhang Pengpeng,Tevaarwerk Emma,Park Byoung-Nam,Savage Donald E.,Celler George K.,Knezevic Irena,Evans Paul G.,Eriksson Mark A.,Lagally Max G.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/nature04501.pdf

Reference28 articles.

1. Lu, Z. H., Lockwood, D. J. & Baribeau, J. M. Quantum confinement and light-emission in SiO2/Si superlattices. Nature 378, 258–260 (1995)

2. Legrand, B., Agache, V., Nys, J. P., Senez, V. & Stievenard, D. Formation of silicon islands on a silicon on insulator substrate upon thermal annealing. Appl. Phys. Lett. 76, 3271–3273 (2000)

3. Liu, W. & Asheghi, M. Phonon-boundary scattering in ultrathin single-crystal silicon layers. Appl. Phys. Lett. 84, 3819–3821 (2004)

4. Liu, F., Huang, M. H., Rugheimer, P. P., Savage, D. E. & Lagally, M. G. Nanostressors and the nanomechanical response of a thin silicon film on an insulator. Phys. Rev. Lett. 89, 136101 (2002)

5. Celler, G. K. & Cristoloveanu, S. Frontiers of silicon-on-insulator. J. Appl. Phys. 93, 4955–4978 (2003)

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