High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep42747.pdf
Reference28 articles.
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3. Shur, M. S. & Gaska, R. Deep-Ultraviolet Light-Emitting Diodes. IEEE Transactions on Electron Devices 57(1), 12–25 (2010).
4. Kneissl, M. et al. Advances in group III-nitride-based deep UV light-emitting diode technology. Semicond. Sci. Technol. 26, 014036 (2011).
5. Zhang, J. P. et al. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm. Appl. Phys. Lett. 81, 4392–4394 (2002).
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