Bistability of Hydrogen in ZnO: Origin of Doping Limit and Persistent Photoconductivity
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep04124.pdf
Reference32 articles.
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2. Özgür, Ü. et al. A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98, 41301 (2005).
3. Van de Walle, C. G. & Neugebauer, J. Universal alignment of hydrogen levels in semiconductors, insulators and solutions. Nature 423, 626–628 (2003).
4. Van de Walle, C. G. Hydrogen as a Cause of Doping in Zinc Oxide. Phys. Rev. Lett. 85, 1012–1015 (2000).
5. Wardle, M. G., Goss, J. P. & Briddon, P. R. First-principles study of the diffusion of hydrogen in ZnO. Phys. Rev. Lett. 96, 205504 (2006).
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