Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer-Reference-Cited by-同舟云学术

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

Published:2023-09-04 Issue:1 Volume:19 Page:34-43
ISSN:1748-3387
Container-title:Nature Nanotechnology
language:en
Short-container-title:Nat. Nanotechnol.

Author:

Mondal Ashok^ORCID,Biswas Chandan^ORCID,Park Sehwan,Cha Wujoon^ORCID,Kang Seoung-Hun^ORCID,Yoon Mina^ORCID,Choi Soo Ho,Kim Ki Kang^ORCID,Lee Young Hee^ORCID

Funder

Institute for Basic Science of Korea

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science,Biomedical Engineering,Atomic and Molecular Physics, and Optics,Bioengineering

Link

https://www.nature.com/articles/s41565-023-01497-x.pdf

Reference66 articles.

1. Liu, C. et al. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 15, 545–557 (2020).

2. Jung, S.-G., Kim, J.-K. & Yu, H.-Y. Analytical model of contact resistance in vertically stacked nanosheet FETs for sub-3-nm technology node. IEEE Trans. Electron Devices 69, 930–935 (2022).

3. Watson, A. J., Lu, W., Guimarães, M. H. D. & Stöhr, M. Transfer of large-scale two-dimensional semiconductors: challenges and developments. 2D Mater. 8, 032001 (2021).

4. Zhang, S. et al. Wafer-scale transferred multilayer MoS2 for high performance field effect transistors. Nanotechnology 30, 174002 (2019).

5. Lee, J. S. et al. Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation. Science 362, 817–821 (2018).

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bismuth as a buffer layer for metal contact with silicon carbide studied by In situ photoelectron spectroscopy;Surface Science;2024-10

2. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures;Chemical Reviews;2024-08-27

3. Few-Layer MoS₂ on a SiO₂/Si Wafer through Sulfurization Chemical Vapor Deposition with a Vaporization-Shadowing Effect;ACS Applied Nano Materials;2024-08-26

4. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides;Chemical Reviews;2024-08-12

5. A clean transfer approach to prepare centimetre-scale black phosphorus crystalline multilayers on silicon substrates for field-effect transistors;Nature Communications;2024-08-09