Few-Layer MoS<sub>2</sub> on a SiO<sub>2</sub>/Si Wafer through Sulfurization Chemical Vapor Deposition with a Vaporization-Shadowing Effect-Reference-Cited by-同舟云学术

Few-Layer MoS₂ on a SiO₂/Si Wafer through Sulfurization Chemical Vapor Deposition with a Vaporization-Shadowing Effect

Published:2024-08-26 Issue:17 Volume:7 Page:20257-20266
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Zhu Zhunda¹^ORCID,Liu Yuanyuan¹,Sato Keisuke¹,Niu Jiangqi²,Chokradjaroen Chayanaphat¹³,Sawada Yasuyuki¹²,Saito Nagahiro¹²³⁴^ORCID

Affiliation:

1. Department of Chemical Systems Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. Institute of Innovation for Future Society, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

3. Department of International Collaborative Program in Sustainable Materials and Technology for Industries between Nagoya University and Chulalongkorn University, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

4. Conjoint Research Laboratory in Nagoya University, Shinshu University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Funder

New Energy and Industrial Technology Development Organization

China Scholarship Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c03188

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5. Modifying the Power and Performance of 2-Dimensional MoS ₂ Field Effect Transistors