Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation-Reference-Cited by-同舟云学术

Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Published:2018-11-16 Issue:6416 Volume:362 Page:817-821
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Lee Joo Song¹²^ORCID,Choi Soo Ho³^ORCID,Yun Seok Joon⁴^ORCID,Kim Yong In⁵,Boandoh Stephen⁶^ORCID,Park Ji-Hoon⁴⁵^ORCID,Shin Bong Gyu⁴⁷⁸^ORCID,Ko Hayoung¹⁵^ORCID,Lee Seung Hee²,Kim Young-Min⁴⁵^ORCID,Lee Young Hee⁴⁵^ORCID,Kim Ki Kang⁶^ORCID,Kim Soo Min¹^ORCID

Affiliation:

1. Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Wanju-Gun, 55324, Republic of Korea.

2. Applied Materials Institute for BIN Convergence, Department of BIN Fusion Technology and Department of Polymer-Nano Science and Technology, Chonbuk National University, Jeonju, 54896, Republic of Korea.

3. Department of Physics, Dongguk University-Seoul, Seoul, 04620, Republic of Korea.

4. Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), 16419, Republic of Korea.

5. Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

6. Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul, 04620, Republic of Korea.

7. Center for Quantum Nanoscience (QNS), Institute for Basic Science (IBS), Ewha Womans University, Seoul, 03760, Republic of Korea.

8. Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

Abstract

Wafer-scale hBN crystalline films Although wafer-scale polycrystalline films of insulating hexagonal boron nitride (hBN) can be grown, the grain boundaries can cause both scattering or pinning of charge carriers in adjacent conducting layers that impair device performance. Lee et al. grew wafer-scale single-crystal films of hBN by feeding the precursors into molten gold films on tungsten substrates. The low solubility of boron and nitrogen in gold caused micrometer-scale grains of hBN to form that coalesced into single crystals. These films in turn supported the growth of epitaxial wafer-scale films of graphene and tungsten disulfide. Science , this issue p. 817

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference39 articles.

1. Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

2. High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

3. Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

4. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers

5. Coulomb drag in graphene–boron nitride heterostructures: Effect of virtual phonon exchange

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