Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes

Author:

Bai Yue,Wu Huaqiang,Wang Kun,Wu Riga,Song Lin,Li Tianyi,Wang Jiangtao,Yu Zhiping,Qian He

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Reference29 articles.

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3. Tsai, C.-L., Xiong, F., Pop, E. & Shim, M. Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes. ACS Nano 7, 5360–5366 (2013).

4. Jo, S. H. & Lu, W. CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory. Nano Lett. 8, 392–397 (2008).

5. Lv, H. et al. Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory. Sci. Rep. 5, (2015), 10.1038/srep07764.

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