Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep05243.pdf
Reference39 articles.
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3. Naber, R. C. G., Asadi, K., Blom, P. W. M., Leeuw, D. M. D. & Boer, B. D. Organic Nonvolatile Memory Devices Based on Ferroelectricity. Adv. Mater. 22, 933–945 (2010).
4. Ling, Q.-D. et al. Polymer electronic memories: Materials, devices and mechanisms. Prog. Polym. Sci. 33, 917–978 (2008).
5. Naber, R. C. G., Asadi, K., Blom, P. W. M., Leeuw, D. M. D. & Boer, B. D. Organic Nonvolatile Memory Devices Based on Ferroelectricity. Adv. Mater. 22, 933–945 (2010).
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