High‐performance P(VDF‐TrFE)/BaTiO 3 nanocomposite based ferroelectric field effect transistor (FeFET) for memory and switching applications-Reference-Cited by-同舟云学术

High‐performance P(VDF‐TrFE)/BaTiO 3 nanocomposite based ferroelectric field effect transistor (FeFET) for memory and switching applications

Published:2021-05-14 Issue:12 Volume:2 Page:2400-2406
ISSN:2688-4011
Container-title:Nano Select
language:en
Short-container-title:Nano Select

Author:

Valiyaneerilakkal Uvais¹²^ORCID,Cherumannil Karumuthil Subash²^ORCID,Singh Kulwant²³^ORCID,Bhanuprakash Loksani²⁴,Komaragiri Rama⁵,Varghese Soney²^ORCID

Affiliation:

1. Department of Physics Manipal University Jaipur Jaipur Rajasthan India

2. Nanomaterials & Devices Research Laboratory School of Materials Science and Engineering National Institute of Technology Calicut (NITC) Calicut Kerala India

3. FlexMEMS Research Centre (FMRC) Department of ECE Manipal University Jaipur Jaipur Rajasthan India

4. Department of Mechanical Engineering MLR Institute of Technology Hyderabad India

5. Department of ECE Bennett University Greater Noida Uttar Pradesh India

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/nano.202100081

Reference30 articles.

1. Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures

2. Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si