High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors-Reference-Cited by-同舟云学术

High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors

Published:2023-08 Issue:8 Volume:70 Page:4338-4344
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rahi Sachin¹^ORCID,Raghuwanshi Vivek¹^ORCID,Konwar Gargi¹^ORCID,Tiwari Shree Prakash¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Flexible Large Area Microelectronics (FLAME) Research Group, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan, India

Funder

Science and Engineering Research Board, Government of India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10194493/10154122.pdf?arnumber=10154122

Reference45 articles.

1. Switching Time in Ferroelectric Organic Field‐Effect Transistors

2. High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

3. Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

4. Nonvolatile Polymer Memory with Nanoconfinement of Ferroelectric Crystals

5. Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

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