Stacking of 2D Electron Gases in Ge Probed at the Atomic Level and Its Correlation to Low-Temperature Magnetotransport-Reference-Cited by-同舟云学术

Stacking of 2D Electron Gases in Ge Probed at the Atomic Level and Its Correlation to Low-Temperature Magnetotransport

Published:2012-09-04 Issue:9 Volume:12 Page:4953-4959
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Scappucci G.¹²,Klesse W. M.¹²,Hamilton A. R.¹,Capellini G.³,Jaeger D. L.⁴,Bischof M. R.⁴,Reidy R. F.⁴,Gorman B. P.⁵,Simmons M. Y.¹²

Affiliation:

1. School of Physics, University of New South Wales, Sydney, NSW 2052, Australia

2. Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, University of New South Wales, Sydney, NSW 2052, Australia

3. Dipartimento di Fisica “E. Amaldi”, Università di Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italy

4. Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76209, United States

5. Department of Materials Science and Engineering, Colorado School of Mines, Golden, Colorado 80401, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl302558b

Reference26 articles.

1. Academic and industry research progress in germanium nanodevices

2. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

3. Influence of encapsulation temperature on Ge:Pδ-doped layers

4. Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers

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