Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating
Author:
Affiliation:
1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
Publisher
Informa UK Limited
Subject
General Materials Science
Link
https://tandfonline.com/doi/pdf/10.1080/14686996.2017.1312520
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