Electron-cyclotron resonance Ar plasma-induced electrical activation of B atoms without substrate heating in B doped Si epitaxial films on Si(100)-Reference-Cited by-同舟云学术

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Electron-cyclotron resonance Ar plasma-induced electrical activation of B atoms without substrate heating in B doped Si epitaxial films on Si(100)

Published:2020-03 Issue: Volume:107 Page:104823
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Li Wu,Sakuraba Masao,Sato Shigeo

Funder

Research Institute of Electrical Communication, Tohoku University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference51 articles.

1. High-performance SiGe HBTs for next generation BiCMOS technology

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

4. Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

5. Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

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