Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon-Reference-Cited by-同舟云学术

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Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon

Published:2011-10-31 Issue:12 Volume:11 Page:5208-5212
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Gasseller M.¹,DeNinno M.¹,Loo R.²,Harrison J. F.³,Caymax M.²,Rogge S.⁴⁵,Tessmer S. H.¹

Affiliation:

1. Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, United States

2. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

3. Department of Chemistry, Michigan State University, East Lansing, Michigan 48864, United States

4. Delft University of Technology, Kavli Institute of Nanoscience, NL-2628 CJ Delft, Netherlands

5. Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales, Sydney 2052, Australia

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl2025163

Reference20 articles.

1. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

2. Realization of Atomically Controlled Dopant Devices in Silicon

3. Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces

4. Scanning-probe spectroscopy of semiconductor donor molecules

5. Subsurface charge accumulation imaging of a quantum Hall liquid

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1. Bias-dependent hole transport through a multi-channel silicon nanowire transistor with single-acceptor-induced quantum dots;Nanoscale;2022

2. A Multi-Electrode System for the Implementation of Solid-State Quantum Devices Based on a Disordered System of Dopant Atoms in Silicon;Moscow University Physics Bulletin;2020-07

3. Single-Electron Structures Based on Solitary Dopant Atoms of Arsenic, Phosphorus, Gold, and Potassium in Silicon;Moscow University Physics Bulletin;2019-03

4. Dopant atoms as quantum components in silicon nanoscale devices;Journal of Semiconductors;2018-05-29

5. Single-electron transistor with an island formed by several dopant phosphorus atoms;Moscow University Physics Bulletin;2017-09

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