Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces-Reference-Cited by-同舟云学术

Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces

Published:2011-08-15 Issue:9 Volume:11 Page:3538-3542
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Teichmann K.¹,Wenderoth M.¹,Loth S.¹,Garleff J. K.²,Wijnheijmer A. P.²,Koenraad P. M.²,Ulbrich R. G.¹

Affiliation:

1. IV. Physikalisches Institut, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

2. COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl201024b

Reference23 articles.

1. Where Do the Dopants Go?

2. The effect of randomness in the distribution of impurity atoms on FET thresholds

3. Fundamental limitations in microelectronics—I. MOS technology

4. Transport signatures of correlated disorder in a two-dimensional electron gas

5. Single-donor ionization energies in a nanoscale CMOS channel

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