Single-Electron Structures Based on Solitary Dopant Atoms of Arsenic, Phosphorus, Gold, and Potassium in Silicon-Reference-Cited by-同舟云学术

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Single-Electron Structures Based on Solitary Dopant Atoms of Arsenic, Phosphorus, Gold, and Potassium in Silicon

Published:2019-03 Issue:2 Volume:74 Page:165-170
ISSN:0027-1349
Container-title:Moscow University Physics Bulletin
language:en
Short-container-title:Moscow Univ. Phys.

Author:

Presnov D. E.,Dagesyan S. A.,Bozhev I. V.,Shorokhov V. V.,Trifonov A. S.,Shemukhin A. A.,Sapkov I. V.,Prokhorova I. G.,Snigirev O. V.,Krupenin V. A.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3103/S0027134919020164.pdf

Reference32 articles.

1. G. Lovat, B. Choi, D. W. Paley, et al., Nat. Nanotechnol. 12, 1050 (2017).

2. S. J. Shin, J. J. Lee, H. J. Kang, et al., Nano Lett. 11, 1591 (2011).

3. B. E. Kane, Nature 393, 133 (1998).

4. J. J. Pla, K. Y. Tan, J. P. Dehollain, et al., Nature 489, 541 (2012).

5. M. Fuechsle, J. A. Miwa, S. Mahapatra, et al., Nat. Nanotechnol. 7, 242 (2012).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Multi-Electrode System for the Implementation of Solid-State Quantum Devices Based on a Disordered System of Dopant Atoms in Silicon;Moscow University Physics Bulletin;2020-07

2. Detection of the Electric Potential Surface Distribution with a Local Probe Based on a Field Effect Transistor with a Nanowire Channel;Technical Physics;2020-05

3. The Influence of Xenon and Argon Ion Irradiation Parameters on Defect Formation in Silicon;Moscow University Physics Bulletin;2020-05

4. A Method for Reconstructing the Potential Profile of Surfaces Coated with a Dielectric Layer;Moscow University Physics Bulletin;2020-01

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