Composition Controlled Superlattice InGaO3(ZnO)m Thin Films by Thickness of ZnO Buffer Layers and Thermal Treatment
Author:
Affiliation:
1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg100924a
Reference20 articles.
1. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
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