Reliable Memristor Based on Ultrathin Native Silicon Oxide-Reference-Cited by-同舟云学术

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Reliable Memristor Based on Ultrathin Native Silicon Oxide

Published:2022-04-27 Issue:18 Volume:14 Page:21207-21216
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ma Zelin¹,Ge Jun¹²^ORCID,Chen Wanjun²,Cao Xucheng¹,Diao Shanqing¹,Liu Zhiyu¹²,Pan Shusheng¹²

Affiliation:

1. Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China

2. Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China

Funder

Guangzhou University

Department of Education of Guangdong Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c03266

Reference43 articles.

1. Nanoscale Memristor Device as Synapse in Neuromorphic Systems

2. Resistive switching materials for information processing

3. Self-rectifying resistive memory in passive crossbar arrays

4. Bi₂O₂Se-Based True Random Number Generator for Security Applications

5. A provable key destruction scheme based on memristive crossbar arrays

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2. FABRICATION AND STUDY OF THE p − Si/α − Si/Ag MEMRISTOR CROSSBAR ARRAY;Журнал экспериментальной и теоретической физики;2024-12-15

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4. Spiking Reservoir Computing Based on Stochastic Diffusive Memristors;Advanced Electronic Materials;2024-08-21

5. Highly Efficient Back-End-of-Line Compatible Flexible Si-Based Optical Memristive Crossbar Array for Edge Neuromorphic Physiological Signal Processing and Bionic Machine Vision;Nano-Micro Letters;2024-07-08

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