High-Density Patterning of InGaZnO by CH<sub>4</sub>: a Comparative Study of RIE and Pulsed Plasma ALE-Reference-Cited by-同舟云学术

High-Density Patterning of InGaZnO by CH₄: a Comparative Study of RIE and Pulsed Plasma ALE

Published:2022-07-19 Issue:29 Volume:14 Page:34029-34039
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kundu Shreya¹^ORCID,Decoster Stefan¹,Bezard Philippe¹,Nalin Mehta Ankit¹^ORCID,Dekkers Harold¹,Lazzarino Frederic¹

Affiliation:

1. IMEC, Kapeldreef 75, Leuven 3001, Belgium

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c07514

Reference36 articles.

1. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD

2. Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing

3. Chand, U.; Fang, Z.; Chun-Kuei, C.; Luo, Y.; Veluri, H.; Sivan, M.; Feng, L. J.; Tsai, S.H.; Wang, X.; Chakraborty, S.; Zamburg, E.; Thean, A. V.Y. 2-Kbit Array of 3-D Monolithically-Stacked IGZO FETs with Low SS-64mV/dec, Ultra-Low-Leakage, Competitive μ-57 cm2/V-s Performance and Novel nMOS-Only Circuit Demonstration 2021 Symposium on VLSI Technology; IEEE, 2021, pp 1–2.

4. Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

5. Towards 10000TOPS/W DNN Inference with Analog in-Memory Computing – A Circuit Blueprint, Device Options and Requirements

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment;Plasma Processes and Polymers;2023-11-16

2. Modeling of microtrenching and bowing effects in nanoscale Si inductively coupled plasma etching process;Journal of Vacuum Science & Technology A;2023-11-08

3. Plasma atomic layer etching of molybdenum with surface fluorination;Applied Surface Science;2023-08

4. Lowest I_OFF < 3×10⁻²¹ A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT;2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2023-06-11

5. Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching;Nanomaterials;2022-10-06