High-Density Patterning of InGaZnO by CH<sub>4</sub>: a Comparative Study of RIE and Pulsed Plasma ALE-Reference-Cited by-同舟云学术

High-Density Patterning of InGaZnO by CH₄: a Comparative Study of RIE and Pulsed Plasma ALE

Published:2022-07-19 Issue:29 Volume:14 Page:34029-34039
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kundu Shreya¹^ORCID,Decoster Stefan¹,Bezard Philippe¹,Nalin Mehta Ankit¹^ORCID,Dekkers Harold¹,Lazzarino Frederic¹

Affiliation:

1. IMEC, Kapeldreef 75, Leuven 3001, Belgium

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c07514

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4. Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

5. Towards 10000TOPS/W DNN Inference with Analog in-Memory Computing – A Circuit Blueprint, Device Options and Requirements

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