Axial Inhomogeneity of Mg-Doped GaN Rods: A Strong Correlation among Componential, Electrical, and Optical Analyses-Reference-Cited by-同舟云学术

Axial Inhomogeneity of Mg-Doped GaN Rods: A Strong Correlation among Componential, Electrical, and Optical Analyses

Published:2018-06-07 Issue:7 Volume:5 Page:2825-2833
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Choi Sunghan¹,Song Hyun Gyu¹,Yoo Yang-Seok¹,Lee Chulwon¹,Woo Kie Young¹,Lee Eunhyung²,Roh Sungwon David²,Cho Yong-Hoon¹^ORCID

Affiliation:

1. Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

2. Advanced Materials & Component Lab, R&D Center, LG Innotek, 46, Baumoe-ro 6-gil, Seocho-gu, Seoul 06763, Republic of Korea

Funder

National Research Foundation of Korea

KAIST

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.8b00030

Reference43 articles.

1. Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants

2. Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

3. Growth Mechanism of Catalyst-Free and Mask-Free Heteroepitaxial GaN Submicrometer- and Micrometer-Sized Rods under Biaxial Strain: Variation of Surface Energy and Adatom Kinetics

4. InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays

5. GaN based nanorods for solid state lighting

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