Growth Mechanism of Catalyst-Free and Mask-Free Heteroepitaxial GaN Submicrometer- and Micrometer-Sized Rods under Biaxial Strain: Variation of Surface Energy and Adatom Kinetics-Reference-Cited by-同舟云学术

Growth Mechanism of Catalyst-Free and Mask-Free Heteroepitaxial GaN Submicrometer- and Micrometer-Sized Rods under Biaxial Strain: Variation of Surface Energy and Adatom Kinetics

Published:2012-07-13 Issue:8 Volume:12 Page:3838-3844
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Ko Suk-Min¹,Kim Je-Hyung¹,Ko Young-Ho¹,Chang Yun Hee²,Kim Yong-Hyun²,Yoon Jongmoon³,Lee Jeong Yong³,Cho Yong-Hoon¹

Affiliation:

1. Department of Physics and Graduate School of Nanoscience & Technology (WCU), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, The Republic of Korea

2. Graduate School of Nanoscience and Technology (WCU), KAIST, Daejeon 305-701, The Republic of Korea

3. Department of Materials Science and Engineering, KAIST, Daejeon 305-701, The Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg300764f

Reference41 articles.

1. GaN nanowire light emitting diodes based on templated and scalable nanowire growth process

2. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

3. Single gallium nitride nanowire lasers