Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants-Reference-Cited by-同舟云学术

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Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants

Published:2017-04-10 Issue:8 Volume:254 Page:1600722
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Bae Si-Young¹,Lekhal Kaddour¹,Lee Ho-Jun²,Min Jung-Wook³,Lee Dong-Seon³,Honda Yoshio¹,Amano Hiroshi¹⁴

Affiliation:

1. Institute of Materials and Systems for Sustainability; Nagoya University, Nagoya; Aichi 464-8603 Japan

2. Department of Electrical Engineering and Computer Science; Nagoya University, Nagoya; Aichi 464-8603 Japan

3. School of Electrical Engineering and Computer Science; Gwangju Institute of Science and Technology; Gwangju Korea

4. Akasaki Research Center; Nagoya University, Nagoya; Aichi 464-8603 Japan

Funder

Japan Society for the Promotion of Science

Gwangju Institute of Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications

2. Nanowire photonics

3. Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

4. Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods

5. Dislocation Filtering in GaN Nanostructures

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1. In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III–V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants;Crystal Growth & Design;2024-04-01

2. Mg incorporation induced microstructural evolution of reactively sputtered GaN epitaxial films to Mg-doped GaN nanorods;Nanotechnology;2024-03-12

3. Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate;Materials;2023-03-20

4. Deterministically-grown GaN microrods on a mask-free plateau patterned substrate;Vacuum;2023-01

5. Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions;physica status solidi (b);2022-02-23

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