InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays-Reference-Cited by-同舟云学术

InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays

Published:2012-05-24 Issue:6 Volume:12 Page:3257-3262
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yeh Ting-Wei¹,Lin Yen-Ting¹,Stewart Lawrence S.¹,Dapkus P. Daniel¹,Sarkissian Raymond¹,O’Brien John. D.¹,Ahn Byungmin¹,Nutt Steven R.¹

Affiliation:

1. Center for Energy Nanoscience, ‡Department of Chemical Engineering and Materials Science, and §Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl301307a

Reference34 articles.

1. Optical properties of InGaN quantum wells

2. Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

3. Origin of efficiency droop in GaN-based light-emitting diodes

4. Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

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