Surface Recombinations in III-Nitride Micro-LEDs Probed by Photon-Correlation Cathodoluminescence
Author:
Affiliation:
1. Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
2. Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
Funder
Agence Nationale de la Recherche
Centre National de la Recherche Scientifique
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.1c01339
Reference32 articles.
1. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study
2. Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes
3. Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes
4. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes
5. Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation
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