Sidewall passivation for InGaN/GaN nanopillar light emitting diodes-Reference-Cited by-同舟云学术

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Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

Published:2014-07-07 Issue:1 Volume:116 Page:013103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Choi Won Hyuck¹,You Guanjun²,Abraham Michael¹,Yu Shih-Ying¹,Liu Jie²,Wang Li²,Xu Jian²,Mohney Suzanne E.¹³

Affiliation:

1. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA

2. Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, USA

3. Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA

Funder

National Science Foundation

NSF NNIN facility at Penn State

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4885455

Reference22 articles.

1. The fabrication of GaN-based nanopillar light-emitting diodes

2. Application of Nanosphere Lithography to LED Surface Texturing and to the Fabrication of Nanorod LED Arrays

3. High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes

4. InGaN–GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks

5. Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes

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3. Impact of fin aspect ratio on enhancement of external quantum efficiency in single AlGaN fin light-emitting diodes pixels;Applied Physics Letters;2023-06-26

4. 37‐2: Distinguished Paper: Efficiency Enhancement of Submicron‐size Light‐Emitting Diodes by Triple Dielectric Layers;SID Symposium Digest of Technical Papers;2023-06

5. Performance improvement of GaN-based microdisk lasers by using a PEALD-SiO₂ passivation layer;Optics Express;2023-05-31

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