High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching-Reference-Cited by-同舟云学术

High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching

Published:2019-06-17 Issue:8 Volume:13 Page:8784-8792
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Huang Hsien-Chih¹^ORCID,Kim Munho¹^ORCID,Zhan Xun²,Chabak Kelson³,Kim Jeong Dong¹,Kvit Alexander⁴,Liu Dong⁵,Ma Zhenqiang⁴⁵^ORCID,Zuo Jian-Min²^ORCID,Li Xiuling¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States

2. Department of Materials Science and Engineering, Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, United States

3. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Wright-Patterson AFB, Ohio 45433, United States

4. Department of Materials Science and Engineering, University of Wisconsin—Madison, Madison, Wisconsin 53706, United States

5. Department of Electrical and Computer Engineering, University of Wisconsin—Madison, Madison, Wisconsin 53706, United States

Funder

Basic Energy Sciences

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b01709

Reference43 articles.

1. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

2. First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases

3. Intrinsic electron mobility limits inβ-Ga2O3

4. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

5. Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process

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