MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation-Reference-Cited by-同舟云学术

MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation

Published:2019-12-02 Issue:12 Volume:13 Page:14262-14273
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Jadwiszczak Jakub¹²³⁴^ORCID,Keane Darragh¹⁵,Maguire Pierce¹²,Cullen Conor P.¹⁵,Zhou Yangbo⁴,Song Huading³^ORCID,Downing Clive¹⁵,Fox Daniel¹²,McEvoy Niall¹⁵,Zhu Rui⁶,Xu Jun⁶,Duesberg Georg S.¹⁵⁷^ORCID,Liao Zhi-Min³⁸^ORCID,Boland John J.¹⁵^ORCID,Zhang Hongzhou¹²^ORCID

Affiliation:

1. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER) Research Centers, Trinity College Dublin, Dublin 2, Ireland

2. School of Physics, Trinity College Dublin, Dublin 2, Ireland

3. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People’s Republic of China

4. School of Material Science and Engineering, Nanchang University, Youxun W Road, Xinjian Qu, Nanchang Shi, Jiangxi Sheng 330031, People’s Republic of China

5. School of Chemistry, Trinity College Dublin, Dublin 2, Ireland

6. Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People’s Republic of China

7. State Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, Neubiberg 85577, Germany

8. Collaborative Innovation Center of Quantum Matter, Beijing 100871, People’s Republic of China

Funder

Leverhulme Trust

Ministry of Science and Technology of the People's Republic of China

Science Foundation Ireland

National Natural Science Foundation of China

H2020 European Research Council

Irish Research Council for Science, Engineering and Technology

Central People's Government of the People's Republic of China

Publisher

American Chemical Society (ACS)

Subject