Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors-Reference-Cited by-同舟云学术

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Published:2016 Issue:1 Volume:45 Page:118-151
ISSN:0306-0012
Container-title:Chemical Society Reviews
language:en
Short-container-title:Chem. Soc. Rev.

Author:

Li Song-Lin¹²³⁴,Tsukagoshi Kazuhito⁵⁶⁷⁸,Orgiu Emanuele¹²³⁴,Samorì Paolo¹²³⁴

Affiliation:

1. Institut de Science et d'Ingénierie Supramoléculaires (ISIS) and International Center for Frontier Research in Chemistry (icFRC)

2. Université de Strasbourg and Centre National de la Recherche Scientifique (CNRS)

3. Strasbourg 67083

4. France

5. World Premier International Center for Materials Nanoarchitechtonics (WPI-MANA)

6. National Institute for Materials Science (NIMS)

7. Tsukuba

8. Japan

Abstract

This review presents recent progress on charge transport properties, carrier scattering mechanisms, and carrier mobility engineering of two-dimensional transition metal chalcogenides.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CS/C5CS00517E

Reference299 articles.

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5. Experimental observation of the quantum Hall effect and Berry's phase in graphene

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