Nonlayered Two-Dimensional Defective Semiconductor γ-Ga2S3 toward Broadband Photodetection-Reference-Cited by-同舟云学术

Nonlayered Two-Dimensional Defective Semiconductor γ-Ga2S3 toward Broadband Photodetection

Published:2019-05-13 Issue:6 Volume:13 Page:6297-6307
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zhou Nan¹²,Gan Lin¹,Yang Rusen²^ORCID,Wang Fakun¹,Li Liang¹,Chen Yicong¹,Li Dehui³^ORCID,Zhai Tianyou¹^ORCID

Affiliation:

1. State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China

2. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710126, People’s Republic of China

3. School of Optical and Electronic Information, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b00276

Reference78 articles.

1. Few‐Layer GeAs Field‐Effect Transistors and Infrared Photodetectors