Affiliation:
1. Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials Science Shanxi Normal University Taiyuan 030031 China
2. National Key Laboratory of Advanced Micro and Nano Manufacture Technology Shanghai Jiao Tong University Shanghai 200240 China
3. Department of Materials Science Fudan University Shanghai 200433 China
Abstract
AbstractWith the rapid developments of Artificial Intelligence (AI) and the Internet of Things (IoT), increasingly intricate and expanding application scenarios are placing higher demands on current machine vision capabilities. Therefore, there is a pressing need to simultaneously achieve diverse functionalities, simple designs, and efficient computing in vision devices. Here, the study develops a two‐terminal optoelectronic device utilizing a single 2D intrinsic defect semiconductor In2S3. The device demonstrates wavelength‐selective photodetection and neuromorphic visual capabilities, attributed to defect‐related charge‐trapping/de‐trapping processes. As a photodetector, the device exhibits a high photoresponsivity of 473.6 A W−1, a high external quantum efficiency of 1.6 × 105%, and a fast rise/fall time of 0.3/1.4 ms at the wavelength of 359 nm. As an all‐in‐one neuromorphic visual device, optoelectronic‐driven fundamental synaptic functions, including paired‐pulse facilitation (PPF), short‐term plasticity (STP), long‐term plasticity (LTP), and “learning‐experience”, are successfully mimicked at the wavelength of 671 nm. Moreover, one‐shot recognition of the 12‐letter image “SHAN XI NORMAL” is achieved through an artificial convolutional neural network. This study provides a new strategy for developing compact high‐level intelligence systems for complex application scenarios.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China